Synthesis and characterization of CuInS2 microsphere under controlled reaction conditions and its application in low-cost solar cells
Identifieur interne : 000417 ( Main/Repository ); précédent : 000416; suivant : 000418Synthesis and characterization of CuInS2 microsphere under controlled reaction conditions and its application in low-cost solar cells
Auteurs : RBID : Pascal:13-0362984Descripteurs français
- Pascal (Inist)
- Diminution coût, Cellule solaire, Méthode ultrasonore, Méthode acoustique, Temps réaction, Ultrason, Effet photovoltaïque, Diffraction RX, Microscopie électronique balayage, Photoluminescence, Bande interdite, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Microsphère, Chlorure de cuivre, Indium, Soufre, Couche mince, Semiconducteur, 8460J, 0779, 7867, CuInS2, Propane-1,2-diol.
- Wicri :
- concept : Soufre.
English descriptors
- KwdEn :
- Acoustic method, Copper chloride, Copper sulfide, Cost lowering, Energy gap, Indium, Indium sulfide, Microsphere, Photoluminescence, Photovoltaic effect, Propylene glycol, Reaction time, Scanning electron microscopy, Semiconductor materials, Solar cell, Sulfur, Ternary compound, Thin film, Ultrasonic method, Ultrasound, X ray diffraction.
Abstract
CuInS2 microspheres were synthesized by Ultrasonic method in propylene glycol as solvent and copper oxalate, indium chloride and thioacetamde (TAA) as precursors. Optimum conditions such as reaction time, solvent type, sulfur source, and ultrasonic power were determined. Then, a thin film of CuInS2 was prepared and its application in solar cells was investigated. Photovoltaic characteristics such as Voc, Jsc and FF were measured. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy were performed to characterize the CuInS2 microsphere. The optical band gap of the CuInS2 microsphere was estimated to be 2.28 eV.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synthesis and characterization of CuInS<sub>2</sub> microsphere under controlled reaction conditions and its application in low-cost solar cells</title><author><name sortKey="Amiri, Omid" uniqKey="Amiri O">Omid Amiri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Young Researchers Club, Kashan Branch, Islamic Azad University</s1><s2>Kashan</s2><s3>IRN</s3><sZ>1 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Kashan</wicri:noRegion></affiliation></author><author><name sortKey="Salavati Niasari, Masoud" uniqKey="Salavati Niasari M">Masoud Salavati-Niasari</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of NanoScience and NanoTechnology, University of Kashan, P.O.Box 87317</s1><s2>Kashan 51167</s2><s3>IRN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Kashan 51167</wicri:noRegion></affiliation></author><author><name sortKey="Sabet, Mohammad" uniqKey="Sabet M">Mohammad Sabet</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of NanoScience and NanoTechnology, University of Kashan, P.O.Box 87317</s1><s2>Kashan 51167</s2><s3>IRN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Kashan 51167</wicri:noRegion></affiliation></author><author><name sortKey="Ghanbari, Davood" uniqKey="Ghanbari D">Davood Ghanbari</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Young Researchers Club, Arak Branch, Islamic Azad University</s1><s2>Arak</s2><s3>IRN</s3><sZ>4 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Arak</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0362984</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0362984 INIST</idno><idno type="RBID">Pascal:13-0362984</idno><idno type="wicri:Area/Main/Corpus">000444</idno><idno type="wicri:Area/Main/Repository">000417</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acoustic method</term><term>Copper chloride</term><term>Copper sulfide</term><term>Cost lowering</term><term>Energy gap</term><term>Indium</term><term>Indium sulfide</term><term>Microsphere</term><term>Photoluminescence</term><term>Photovoltaic effect</term><term>Propylene glycol</term><term>Reaction time</term><term>Scanning electron microscopy</term><term>Semiconductor materials</term><term>Solar cell</term><term>Sulfur</term><term>Ternary compound</term><term>Thin film</term><term>Ultrasonic method</term><term>Ultrasound</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diminution coût</term><term>Cellule solaire</term><term>Méthode ultrasonore</term><term>Méthode acoustique</term><term>Temps réaction</term><term>Ultrason</term><term>Effet photovoltaïque</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Photoluminescence</term><term>Bande interdite</term><term>Composé ternaire</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>Microsphère</term><term>Chlorure de cuivre</term><term>Indium</term><term>Soufre</term><term>Couche mince</term><term>Semiconducteur</term><term>8460J</term><term>0779</term><term>7867</term><term>CuInS2</term><term>Propane-1,2-diol</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Soufre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuInS<sub>2</sub> microspheres were synthesized by Ultrasonic method in propylene glycol as solvent and copper oxalate, indium chloride and thioacetamde (TAA) as precursors. Optimum conditions such as reaction time, solvent type, sulfur source, and ultrasonic power were determined. Then, a thin film of CuInS<sub>2</sub> was prepared and its application in solar cells was investigated. Photovoltaic characteristics such as V<sub>oc</sub>, J<sub>sc</sub> and FF were measured. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy were performed to characterize the CuInS<sub>2</sub> microsphere. The optical band gap of the CuInS<sub>2</sub> microsphere was estimated to be 2.28 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Synthesis and characterization of CuInS<sub>2</sub> microsphere under controlled reaction conditions and its application in low-cost solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>AMIRI (Omid)</s1></fA11><fA11 i1="02" i2="1"><s1>SALAVATI-NIASARI (Masoud)</s1></fA11><fA11 i1="03" i2="1"><s1>SABET (Mohammad)</s1></fA11><fA11 i1="04" i2="1"><s1>GHANBARI (Davood)</s1></fA11><fA14 i1="01"><s1>Young Researchers Club, Kashan Branch, Islamic Azad University</s1><s2>Kashan</s2><s3>IRN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of NanoScience and NanoTechnology, University of Kashan, P.O.Box 87317</s1><s2>Kashan 51167</s2><s3>IRN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Young Researchers Club, Arak Branch, Islamic Azad University</s1><s2>Arak</s2><s3>IRN</s3><sZ>4 aut.</sZ></fA14><fA20><s1>1485-1494</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000501052880190</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0362984</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>CuInS<sub>2</sub> microspheres were synthesized by Ultrasonic method in propylene glycol as solvent and copper oxalate, indium chloride and thioacetamde (TAA) as precursors. Optimum conditions such as reaction time, solvent type, sulfur source, and ultrasonic power were determined. Then, a thin film of CuInS<sub>2</sub> was prepared and its application in solar cells was investigated. Photovoltaic characteristics such as V<sub>oc</sub>, J<sub>sc</sub> and FF were measured. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy were performed to characterize the CuInS<sub>2</sub> microsphere. 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l="FRE"><s0>CuInS2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Propane-1,2-diol</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Propylene glycol</s0><s4>CD</s4><s5>96</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>12</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>12</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Calcopirita</s0><s5>12</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>13</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>13</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>13</s5></fC07><fN21><s1>343</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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